|
[1] D. A. Neamen , “Semiconductor Physics And Devices Basic Principle”, Copyright 2003 by MGH, 3rd [2] S. M. Sze , ” Semiconductor Devices Physics and Technology” , Copyright 1981 by JWS, 2nd [3] Dieter K. Schroder , “Semiconductor material and device characterization” , John Wiley & Sons , 2nd [4] B. J. Baliga , “Power Semiconductor Devices” , Copyright 1996 by PWS [5] SYNOPSYS TSUPREM-4, Two-Dimensional Process Simulation Program,Version-2006.06 [6] SYNOPSYS MEDICI, Two-Dimensional Device Simulation Program, Version-2006.06 [7] H. J. J. De Man, "The lnfluence of Heavy Doping on the Emitter Efficiency of a Bipolar Transistor," IEEE Trans. Electron Devices, ED-18,pp.833, 1971﹒ [8] Jun-lin Tsai , Jei-feng Huang , Shih-hui Chen , Jeng Gong , Ruey-hsin Liou , and Shun-liang Hsu , “High Voltage NPN-Bipolar Transistor Using P+-Buried Layer in BiCMOS Process” , IEDM Tech Dig, pp 189-192,1999 [9] H Funaki , Y Yamaguchi , Y Kawaguchi , et al “High voltage BiCDMOS technology on bonded 2pm SOI integrating vertical npn pnp, 60V-LDMOS and MPU, capable of 200°C operation” , IEDM Tech Dig , pp 967-970. 1995 [10] J.A. Appels and H.M.J. Vaes , “High voltage thin layer devices(RESURF Devices)”, IEDM Tech Dig , pp 238~241, 1979 [11] M.A. Shibib , “Experimental investigation of high voltage and high current gain of a lateral bipolar transistor based on a lateral DMOS structure” , ISPSD 96’ Proceedings, pp 21 1-214, 1996 [12] Torkel Arnborg , “Modelling and Simulation of High Speed, High Voltage Bipolar SO1 Transistor with Fully Depleted Collector” , IEDM Tech Dig , pp 743-746. 1994 [13] Ju-Sung Park and Arnost Neugroschel , "Current Dependence of the Emitter Resistance of Bipolar Transistors", IEEE trans. Electron Devices, vol. 37, no.6, pp.1540-1542, June, 1990. [14] H. C. Poon, H. K. Gummel, D. L. Scharfetter, "High injection in epitaxial transistor," IEEE TED, pp.455-458, May, 1969 [15] Dermot MacSweeney, “Improved Modeling and Parameter Extraction of Bipolar Devices,” M.Eng.Sc.,N.M.R.C.,U.C.C,Ireland,Oct.1995.
|