此篇論文是以0.35um製程之橫向金氧半場效電晶體為主體，分成量測與模擬兩個部分的特性來探討分析，ㄧ是使用HP4156及Keithley 236量測元件的Id-Vd、Id-Vg曲線來分析導通電阻的組成及DIBL特性參數的萃取，另ㄧ方面是以台積電目前已生產0.35um製程的高壓元件，使用Tsuprem4及Medici模擬軟體進行部份結構調整，期許能達到更佳的效果。

In this thesis, the investigation subject is lateral diffusion metal-oxide-silicon field effect transistor fabricated with 0.35um process technologies. It is divided into two sections, namely measurement and simulation. The former part is fulfilled by measuring the Id-Vd and Id-Vg curves with HP4156 and Keithley 236 systems in order to analyze the components’ electrical properties such as on-resistance and breakdown voltage as well as to extract characteristic parameter of DIBL. On the other hand, TCAD tools like Tsuprem4[1] and Medici [2]are used to modulate some portion of the device structure with a well-built 0.35um high voltage process technology to optimize the device performance. Satisfactory results are obtained.

摘要--------------------------------------------------------------------------------Ⅰ
致謝--------------------------------------------------------------------------------Ⅲ
目錄--------------------------------------------------------------------------------Ⅳ
第一章：簡介-----------------------------------------------------------------------1
第二章：元件發展與理論回顧
2.1 LDMOSFET的結構----------------------------------------------------3
2.2 LDMOSFET的工作原理----------------------------------------------4
2.2.1崩潰機制----------------------------------------------------------4
2.2.2 導通電阻---------------------------------------------------------4
2.2.3 臨限電壓---------------------------------------------------------8
2.2.4 場板應用--------------------------------------------------------10
第三章：元件結構介紹及量測分析
3.1 元件結構---------------------------------------------------------------19
3.2 量測分析(一)：電阻萃取-------------------------------------------20
3.2.1 理論說明--------------------------------------------------------20
3.2.2 萃取結果--------------------------------------------------------21
3.3 量測分析(二)：DIBL特性參數萃取-------------------------------25
3.3.1 DIBL效應的定義----------------------------------------------25
3.3.2 DIBL參數萃取方法-------------------------------------------30

3.3.3 DIBL分析------------------------------------------------------------31
3.3.4析法比較--------------------------------------------------------------34
第四章：元件模擬分析
4.1 電性參數定義---------------------------------------------------------49
4.1.1 崩潰電壓--------------------------------------------------------49
4.1.2 導通電阻--------------------------------------------------------49
4.1.3 量測和模擬結果之標準化-----------------------------------50
4.2　模擬分析--------------------------------------------------------------50
4.2.1 電極長度變化--------------------------------------------------51
4.2.2 源汲極深度奈米化--------------------------------------------51
4.2.3 結構變化--------------------------------------------------------52
第五章：結論---------------------------------------------------------------------71
參考文獻--------------------------------------------------------------------------73

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[2] AVANT! MEDICI, Two-Dimensional Device Simulation Program, Version-2000.4.0
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